牛晓龙,蔡春立,何凤池,金晓鹏

• 1:六九硅业有限公司

摘要(Abstract)：

对硅烷热分解法制备多晶硅的工艺作了介绍,探讨了硅烷法制备电子级多晶硅的优势。硅烷CVD法所沉积的多晶硅,在电阻率、少子寿命、杂质含量等方面符合高纯多晶硅的要求,纯度不仅可以达到国标(GB/T 12963-2009)电子一级品的标准,还可以满足区熔用超高纯多晶硅的要求。合理控制反应条件、保持反应环境的高度洁净,能够得到均匀、致密的高纯多晶硅棒,可以作为区熔法生产单晶硅棒的原料。

关键词(KeyWords)： 硅烷热分解;多晶硅;高纯;区熔

Abstract:

Keywords:

基金项目(Foundation):

作者(Author): 牛晓龙,蔡春立,何凤池,金晓鹏

参考文献(References)：

• [1]范龙雪,王尚鑫,孙硕,等.有机/无机杂化太阳电池的研究述评[J].河北科技大学学报,2013,34(6):572-582.FAN Longxue,WANG Shangxin,SUN Shuo,et al.Review on organic plolymer/inorganic semiconductor hybrid solar cell[J].Journal of Hebei University of Science and Technology,2013,34(6):572-582.
• [2]梁骏吾.电子级多晶硅的生产工艺[J].中国工程科学,2000,2(12):34-39.LIANG Junwu.The production technology of electronic grade polycrystalline silicon[J].Engineering Science,2000,2(12):34-39.
• [3]樊舜尧,师文林.多晶硅生产技术及发展现状[J].新材料产业,2008(10):22-26.FAN Shunyao,SHI Wenlin.Development status and silicon production technology[J].Advanced Materials Industry,2008(10):22-26.
• [4]侯彦青,谢刚,陶东平,等.太阳能级多晶硅生产工艺[J].材料导报,2010,24(13):31-34.HOU Yanqing,XIE Gang,TAO Dongping,et al.Production technology of solar-grade polycrystalline silicon[J].Materials Review,2010,24(13):31-34.
• [5]肖全松,张纯.谈硅烷法制备太阳能级多晶硅的工艺[J].江西化工,2011(3):21-25.XIAO Quansong,ZHANG Chun.Production technology of solar-grade polycrystalline silicon based on silane method[J].Jiangxi Chemical Industry,2011(3):21-25.
• [6]余京松,沃银花,张金波.对国内硅烷生产的几点看法[J].低温与特气,2009,27(6):7-11.YU Jingsong,WO Yinhua,ZHANG Jinbo.Some opinions about domestic silane production[J].Low Temperature and Specialty Gases,2009,27(6):7-11.
• [7]桂子王.硅烷的性质和使用[J].微电子学与计算机,1986(6):54-57.GUI Ziwang.Properties and applications of the silane[J].Microelectronics&Computer,1986(6):54-57.
• [8]罗列,姚晓晖,姚奎鸿.典型分解炉中硅烷分解沉积速率的研究[J].浙江理工大学学报,2012,29(2):263-265.LUO Lie,YAO Xiaohui,YAO Kuihong.Deposition rate of polycrystalline silicon from monosilane pyrolysis[J].Journal of Zhejiang Sci-Tech University,2012,29(2):263-265.
• [9]邓寅生,刘少辉,文广超,等.硅烷热分解法制取工业硅的影响因素分析[J].能源环境保护,2011,25(1):16-18.DENG Yinsheng,LIU Shaohui,WEN Guangchao,et al.The influence factors of silane pyrolysis to product industrial grade silicon[J].Energy Environmental Protection,2011,25(1):16-18.
• [10]郭立洲.Φ105mm区熔硅单晶的生长工艺研究[J].稀有金属,2002,26(6):513-516.GUO Lizhou.Φ105 mm FZ-Si monocrystal growth process[J].Chinese Journal of Rare Metals,2002,26(6):513-516.
• [11]梁骏吾.兴建年产一千吨电子级多晶硅工厂的思考[J].中国工程科学,2000,2(6):33-35.LIANG Junwu.Thoughts on the construction of an electronic grade polycrystalline silicon plant with annual production of 1 000tin China[J].Engineering Science,2000,2(6):33-35.
• [12]栾国旗,张殿朝,闫萍,等.多晶硅真空区熔提纯技术研究[J].电子工业专用设备,2010,39(8):16-19.LUAN Guoqi,ZHANG Dianchao,YAN Ping,et al.Research of the technology that polysilicon was purifying in vacuum[J].Equipment for Electronic Products Manufacturing,2010,39(8):16-19.
• [13]廖敏.氢气纯度对多晶硅产品质量的影响及采取的对策[J].四川有色金属,2010(3):24-26.LIAO Min.Hydrogen gas purity of polysilicon product quality and countermeasures[J].Sichuan Nonferrous Metals,2010(3):24-26.
• [14]董前程.影响多晶硅质量的因素[J].氯碱工业,2012,48(9):31-33.DONG Qiancheng.Factors of influencing quality of polycrystalline silicon[J].Chlor-Alkali Industry,2012,48(9):31-33.